TE28F160C3

The TE28F160C3 is designed as one kind of CMOS flash memory device that offers the most cost-effective and reliable alternative for read / write random access nonvolatile memory. Also this device is a 2048 kilobit nonvolatile memory organized as 262,144 bytes of eight bits and with the 12.0 V VPP supply, the 28F020 performs 100,000 erase and program cycles-well within the time limits of the quick-pulse programming and quick-erase algorithms.

Features of the TE28F160C3 are:(1)flash electrical chip-erase: 2 second typical chip-erase; (2)quick-pulse programming algorithm: 10 S typical byte-program and 4 second chip-program; (3)100,000 erase / program cycles; (4)12.0 V ±5% VPP; (5)high-performance read: 90 ns maximum access time; (6)integrated program / erase stop timer; (7)command register architecture for microprocessor / microcontroller compatible write interface; (8)noise immunity features: ±10% Vcc tolerance and maximum latch-up immunity through EPI processing; (9)extended temperature options.

The absolute maximum ratings of the TE28F160C3 can be summarized as:(1)Operating Temperature During Read: 0 °C to +70 °C;(2)Operating Temperature During Erase / Program: 0 °C to +70 °C;(3)Temperature Under Bias: -10 °C to +80 °C;(4)Storage Temperature:65 °C to +125 °C;(5)Voltage on Any Pin with Respect to Ground: -2.0 V to +7.0 V;(6)Voltage on Pin A9 with Respect to Ground: -2.0 V to +13.5 V;(7)Output Short Circuit Current: 100 mA. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .