Photodetector Transistors 37 Degree 150mW
TEKT5400S: Photodetector Transistors 37 Degree 150mW
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| Maximum Power Dissipation : | 150 mW | Maximum Dark Current : | 100 nA |
| Parameter | Test condition | Symbol | Value | Unit |
| Collector Emitter Voltage | VCEO | 70 | V | |
| Emitter Collector Voltage | VECO | 7 | V | |
| Collector Current | IC | 100 | mA | |
| Peak Collector Current | tp/T = 0.5, tp 10 ms | ICM | 200 | mA |
| Total Power Dissipation | Tamb 40 °C | Ptot | 150 | mW |
| Junction temperature | Tj | 100 | °C | |
| Storage temperature range | Tstg | 40...+100 | °C | |
| Operating temperature | Tamb | 40...+85 | °C | |
| Soldering temperature | t 5 s | Tsd | 260 | °C |
| Thermal Resistance Junction/Ambient | RthJA | 400 | K/W |
TEKT5400S is a high sensitive silicon NPN epitaxial planar phototransistor in a flat side view plastic package.A small recessed lens provides a high sensitivity in a low profile case.
The molded package itself is an IR filter, spectrum matched to IR emitters (p > 850nm or 950 nm).