Photodetector Transistors 5V 100mW 880nm
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| Maximum Power Dissipation : | 100 mW | Maximum Dark Current : | 200 nA |
| Package / Case : | SMT-2 |
| Parameter | Test Conditions | Symbol | Value | Unit |
| Emitter Collector Voltage Collector current Collector peak current Total Power Dissipation Junction Temperature Storage Temperature Range Operating Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient |
tp/T 0.5, tp 10s Tamb 55 °C t 5 s |
VECO IC ICM Ptot Tj Tstg Tamb Tsd RthJA |
5 50 100 100 100 - 40 to + 100 - 40 to + 85 < 260 400 |
V V mA mA mW °C °C °C K/W |
Here is the description about TEMT1030, TEMT1040 of the Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors. TEMT1000 series are silicon NPN phototransistors with high radiant sensitivity in black, surface mount, plastic packages with lens and daylight blocking filter. Filter bandwidth is matched with 870 nm to 950 nm IR emitters.
Here are the features: Package type: surface mount; Package form: GW, RGW, yoke, axial; Dimensions (L x W x H in mm): 2.5 x 2 x 2.7; High radiant sensitivity; Daylight blocking filter matched with 870 nm to 950 nm IR emitters; Fast response times;Angle of half sensitivity:? = ± 15°;Package matches with IR emitter series TSML1000;Floor life: 168 h, MSL 3, acc. J-STD-020;Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC.
Here are the Absolute Maximum Ratings (TA = 25). Emitter collector voltage is 5V. Collector current is 50mA. Collector peak current is 100mA. Power dissipation is 100mW. Junction temperature is 10°C. Operating temperature range is from - 40 to + 85°C. Storage temperature range is from - 40 to + 100°C. Soldering temperature is 260°C. Thermal resistance junction/ambient Soldered on PCB with pad dimensions: 4 mm x 4 mm is 400K/W.
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