Photodetector Transistors 5V 100mW 850nm
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| Maximum Power Dissipation : | 100 mW | Maximum Dark Current : | 200 nA |
| Package / Case : | SMD |
|
PARAMETER |
TEST CONDITION |
SYMBOL |
VALUE |
UNIT |
| Emitter collector voltage |
VECO |
5 |
V | |
| Collector current |
IC |
50 |
mA | |
| Collector peak current | tp/T = 0.5, tp 10 ms |
ICM |
100 |
mA |
| Power dissipation | Tamb 55 |
PV |
100 |
mW |
| Junction temperature |
Tj |
100 |
||
| Operating temperature range |
Tamb |
- 40 to + 85 |
||
| Storage temperature range |
Tstg |
- 40 to + 100 |
||
| Soldering temperature | Acc. reflow solder profile fig. 8 |
Tsd |
< 260 |
|
| Thermal resistance junction/ambient | Soldered on PCB with pad dimensions: 4 mm x 4 mm |
RthJA |
400 |
K/W |