Photodetector Transistors Ambient Light Sensor
TEMT6200FX01: Photodetector Transistors Ambient Light Sensor
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| Maximum Power Dissipation : | 100 mW | Maximum Dark Current : | 50 nA |
| Package / Case : | SMD |
|
Parameter |
Test condition |
Symbol |
Value |
Unit |
| Collector emitter voltage |
VCEO |
6 |
V | |
| Emitter collector voltage |
VECO |
1.5 |
V | |
| Collector current |
IC |
20 |
mA | |
| Total power dissipation | Tamb 55 |
PV |
100 |
mW |
| Junction temperature |
Tj |
100 |
||
| Operating temperature range |
Tamb |
- 40 to + 100 |
||
| Storage temperature range |
Tstg |
- 40 to + 100 |
||
| Soldering temperature | Acc.reflow profile fig.6,page 3 |
Tsd |
260 |
|
| Thermal resistance junction/ ambient |
RthJA |
450 |
K/W |
TEMT6200FX01 is a silicon NPN epitaxial planar phototransistor in a miniature transparent 0805 package for surface mounting. The device is sensitive to the visible spectrum.