TGA9083-EEU

SpecificationsDrain supply voltage, VD ................................................................................. 10 VNegative supply voltage range, VG ........................................................ - 5 V to 0 VDrain supply current, ID ................................................

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SeekIC No. : 004518400 Detail

TGA9083-EEU: SpecificationsDrain supply voltage, VD ................................................................................. 10 VNegative supply voltage range, VG ..........................................

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Part Number:
TGA9083-EEU
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Specifications

Drain supply voltage, VD ................................................................................. 10 V
Negative supply voltage range, VG ........................................................ - 5 V to 0 V
Drain supply current, ID ................................................................................... 3.5 A
Power dissipation, PD, at (or below) 25° C base-plate temperature* ............. 39 W
Input continuous wave power, PIN .......................................................... 25.5 dBm
Operating channel temperature, TCH** ............... ..................................... 150 °C
Mounting temperature (30 sec), TM .............................................................. 320 °C
Storage temperature range, TSTG ..................................................... - 65 to 150 °C



Description

The TriQuint TGA9083 - EEU is a monolithic power amplifier which operates from 6.5 to11.5 GHz. This device is currently classified as an Engineering Evaluation Unit. This t wo stage poweramplifier partially consists of a 2.5 -mm pHEMT driving a 11.36 -mm pHEMT at the output. TheTGA9083-EEU is capable of providing 8 Watts of output power with 35% PAE when biased at 9 Volts.Typical 7 Volts operation provides 5 Watts of output power with a power-added efficiency of 40percent. Typical small signal gain is 19-dB. In balanced configuration, 12 Watts of output power isachievable with 40% PAE.

The TGA9083-EEU is fabricated using TI's 0.25um T-gate power pHEMT process. This device offer seither standard gate biasing or an on-chip active gate bias circuit which simplifies gate biasing . Theactive gate bias (AGB) circuit requires a - 5 V supply. This amplifier's output power and high efficiencyover 6.5 to 11.5 GHz make it a viable power amp solution in applications such as point-to-point radio ,phased-array radar, and telecommunications.

Bond pad and backside metallization is gold plated for compa tibility with eutectic alloy attachmentmethods as well as with thermocompression and thermosonic wire-bonding processes.The TGA9083 - EEU is supplied in chip for m and is readily assembled using automated equipment.Ground is provided to the circuitr y through vias to the backside metallization.




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