TGF2021-01

Noise Figure :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Technology Type : pHEMT
Frequency : 12 GHz
Gain : 11 dB
Drain Source Voltage VDS : 12 V
Gate-Source Breakdown Voltage : - 14 V
Package / Case : 4-Pin-Die
Forward Transconductance gFS (Max / Min) : 375 mS
Continuous Drain Current : 300 mA


Features:

• Frequency Range: DC - 12 GHz
• > 30 dBm Nominal Psat
• 59% Maximum PAE
• 11 dB Nominal Power Gain
• Suitable for high reliability applications
• 1mm x 0.35m Power pHEMT
• Nominal Bias Vd = 8-12V, Idq = 75-125mA(Under RF Drive, Id rises from 75mA to 240mA)
• Chip Dimensions: 0.57 x 0.53 x 0.10 mm(0.022 x 0.021 x 0.004 in)


Application

• Point-to-point Radio
• High-reliability space
• Military
• Base Stations
• Broadband Wireless Applications


Specifications

SYMBOL	PARAMETER 5/	VALUE	NOTES
V+	POSITIVE SUPPLY VOLTAGE	9 V	2/
V-	Negative Supply Voltage Range	-5V TO 0V
I+	POSITIVE SUPPLY CURRENT	4 A	2/
| IG |	Gate Supply Current	113 mA
PIN	INPUT CONTINUOUS WAVE POWER	30.3 dBm	2/
PD	POWER DISSIPATION	20.8 W	2/, 3/
TCH	Operating Channel Temperature	150 °C	4/, 5/
TM	MOUNTING TEMPERATURE (30 SECONDS)	320 0C
TSTG	STORAGE TEMPERATURE	-65 to 150 0C

Description

The TriQuint TGF2021-01 is a discrete1 mm pHEMT which operates fromDC-12 GHz. The TGF2021-01 isdesigned using TriQuint's provenstandard 0.35um power pHEMTproduction process.

The TGF2021-01 typically provides> 30 dBm of saturated output powerwith power gain of 11 dB. Themaximum power added efficiency is59% which makes the TGF2021-01appropriate for high efficiencyapplications.

The TGF2021-01 is also ideally suitedfor Point-to-point Radio, High-reliabilityspace, and Military applications.The TGF2021-01 has a protectivesurface passivation layer providingenvironmental robustness.

Parameters:

Technical/Catalog Information	TGF2021-01
Vendor	Triquint Semiconductor Inc
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TGF2021 01 TGF202101