TGF2021-04

Noise Figure :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Technology Type : pHEMT
Frequency : 12 GHz
Gain : 11 dB
Drain Source Voltage VDS : 12 V
Gate-Source Breakdown Voltage : - 14 V
Package / Case : 8-Pin-Die
Forward Transconductance gFS (Max / Min) : 1.5 S
Continuous Drain Current : 1.2 A


Features:

`Frequency Range: DC - 12 GHz
`> 36 dBm Nominal Psat
`59% Maximum PAE
`11 dB Nominal Power Gain
`Suitable for high reliability applications
`4mm x 0.35m Power pHEMT
`Nominal Bias Vd = 8-12V, Idq = 300-500mA (Under RF Drive, Id rises from 300mA to 960mA)
`Chip Dimensions: 0.57 * 1.30 * 0.10 mm (0.022 * 0.051 * 0.004 in)


Application

·Point-to-point Radio
·High-reliability space
·Military
·Base Stations
·Broadband Wireless Applications


Description

The TriQuint TGF2021-04 is a discrete 4 mm pHEMT which operates from DC-12 GHz.The TGF2021-04 is designed usingTriQuint's proven standard 0.35um powe pHEMT production process.

The TGF2021-04 typically provides > 36 dBm of saturated output power with power gain of 11 dB.  The maximum power added efficiency is 59% which makes the TGF2021-04 appropriate for high efficiency applications.

The TGF2021-04 is also ideally suited for Point-to-point Radio, High-reliability space,and Military applications.

The TGF2021-04 has a protective surface passivation layer providing environmental robustness.

Lead-free and RoHS compliant

Parameters:

Technical/Catalog Information	TGF2021-04
Vendor	Triquint Semiconductor Inc
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TGF2021 04 TGF202104