TGF4230-SCC

Noise Figure :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Technology Type : HEMT
Frequency : 12 GHz
Drain Source Voltage VDS : 12 V
Package / Case : 4-Pin-Die
Gate-Source Breakdown Voltage : - 22 V
Gain : 10 dB at 8.5 GHz
Forward Transconductance gFS (Max / Min) : 198 mS
Continuous Drain Current : 294 mA


Features:

• Nominal Pout of 28.5 dBm at 8.5 GHz
• Nominal Gain of 10.0 dB at 8.5 GHz
• Nominal PAE of 55 % at 8.5 GHz
• 1200 m HFET
• 0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x 0.004 in)
• Bias at 8 Volts, 96 mA


Application

• Cellular Base Stations
• High dynamic-range LNAs
• Military and Space


Specifications

Symbol	Parameter 1/	Value	Notes
VDS	Drain to Source Voltage	12V
VGS	Gate to Source Voltage Range	0 to -5.0 Volts
PD	Power Dissipation	See Thermal Data
TCH	Operating Channel Temperature	150	2/,3/
TM	Mounting Temperature (30 seconds)	320
TSTG	Storage Temperature	-65 to 150

1/ These ratings represent the maximum values for this device. Stresses beyond those listed under "Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "DC Probe Characteristics" and "Electrical Characteristics" is not implied. Exposure to maximum rated conditions for extended periods may affect device reliability.
2/ Junction temperature will directly affect the device Mean Time to Failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
3/ These ratings apply to each individual FET


Description

The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation.

Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire-bonding processes. The TGF4230-SCC is readily assembled using automatic equipment.

For an Application Note on the use of HFETs, refer to the TriQuint website for the Millimeter Wave Division.

Parameters:

Technical/Catalog Information	TGF4230-SCC
Vendor	Triquint Semiconductor Inc
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TGF4230 SCC TGF4230SCC