TGF4240-SCC

Noise Figure :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Technology Type : HEMT
Frequency : 12 GHz
Drain Source Voltage VDS : 12 V
Gate-Source Breakdown Voltage : - 22 V
Gain : 10 dB at 8.5 GHz
Forward Transconductance gFS (Max / Min) : 396 mS
Continuous Drain Current : 588 mA
Package / Case : 6-Pin-Die


Features:

• 2400 m x 0.5 m HFET
• Nominal Pout of 31.5 dBm at 8.5 GHz
• Nominal Gain of 10.0 dB at 8.5 GHz
• Nominal PAE of 56 % at 8.5 GHz
• Frequency Range: DC - 12 GHz
• Suitable for high reliability applications
• 0.6 x 1.0 x 0.1 mm (0.024 x 0.040 x 0.004 in)


Application

• Cellular Base Stations
• High-reliability space
• Military


Specifications

SYMBOL	PARAMETER 1/	VALUE	NOTES
VDS	Drain to Source Voltage	12 V
VGS	Gate to Source Voltage Range	0 to -5.0 Volts
PD	Power Dissipation	TBD	2/
TCH	Operating Channel Temperature	150C	3/, 4/
TSTG	Storage Temperature	-65 to 200C
TM	Mounting Temperature (30 seconds)	320C

Description

The TriQuint TGF4240-SCC is a single gate 2.4 mm Discrete GaAs HeterostructureField Effect Transistor (HFET) designed for high-efficiency power applications up to 12GHz in Class A and Class AB operation.

Typical performance at 8.5 GHz is 31.5 dBm power output, 10 dB Gain, and 56% PAE.Bond-pad and backside metalization is gold plated for compatibility with eutectic alloyattach methods as well as thermocompression and thermosonic wire-bondingprocesses.

The TGF4240-SCC is readily assembled using automatic equipment.

Parameters:

Technical/Catalog Information	TGF4240-SCC
Vendor	Triquint Semiconductor Inc
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TGF4240 SCC TGF4240SCC