TGF4260-SCC

Noise Figure :
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Technology Type : HEMT
Drain Source Voltage VDS : 12 V
Frequency : 10.5 GHz
Gain : 9.5 dB at 6 GHz
Forward Transconductance gFS (Max / Min) : 1.58 S
Gate-Source Breakdown Voltage : - 22 V
Continuous Drain Current : 2.35 A
Power Dissipation : 6.8 W
Package / Case : 20-Pin-Die


Features:

• 9600 m x 0.5 m HFET
• Nominal Pout of 37dBm at 6 GHz
• Nominal Gain of 9.5dB at 6 GHz
• Nominal PAE of 52% at 6 GHz
• Frequency Range: DC - 10.5 GHz
• Suitable for high reliability applications
• 0.6 x 2.4 x 0.1 mm (0.024 x 0.093 x 0.004 in)


Application

• Cellular Base Stations
• High-reliability space
• Military


Specifications

Symbol	Parameter 1/	Value	Notes
VDS	Drain to Source Voltage	12V
VGS	Gate to Source Voltage Range	0 to -5.0 Volts
PD	Power Dissipation	6.8W	2/
TCH	Operating Channel Temperature	150	3/,4/
TM	Mounting Temperature (30 seconds)	320
TSTG	Storage Temperature	-65 to 150

1/ These ratings represent the maximum values for this device. Stresses beyond those listed under "Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "DC Probe Characteristics" is not implied. Exposure to maximum rated conditions for extended periods may affect device reliability.
2/ When operated at this bias condition with a base plate temperature of 70 0C, the MTTF life is reduced from 1.7 E+12 to 3 E+9 hours.
3/ Junction temperature will directly affect the device Mean Time to Failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels
4/ These ratings apply to each individual FET


Description

The TriQuint TGF4260-SCC is a single gate 9.6 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation.

Typical performance at 6 GHz is 37dBm power output, 9.5 dB Gain, and 52% PAE.

Bond pad and backside metallization are gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes.

The TGF4260-SCC is readily assembled using automatic equipment.

Parameters:

Technical/Catalog Information	TGF4260-SCC
Vendor	Triquint Semiconductor Inc
Category	Discrete Semiconductor Products
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	TGF4260 SCC TGF4260SCC