Features: 4 Matched NPN Transistors (300)
4 Matched PNP Transistors (320)
2 Matched NPNs and PNPs (340)
4 Matched NP6N - 4 Matched PNP (380)
Monolithic Construction
Low Noise
- 0.75 nV /Hz (PNP)
- 0.8 nV/ Hz (NPN)
High Speed
- fT = 350 MHz (NPN)
- fT = 325 MHz (PNP)
Excellent Matching 500 V typical between devices of same gender
Dielectrically Isolated
36V VCEO
Application Microphone Preamplifiers
Current Sources
Current Mirrors
Log/Antilog Amplifiers
Multipliers
Servos
Specifications
| Parameter |
Symbol |
Conditions |
Min |
Typ |
Max |
Units |
| NPN Collector-Emitter Voltage |
BVCEO |
IC = 1 mAdc, IB = 0 |
36 |
40 |
- |
V |
| NPN Collector-Base Voltage |
BVCBO |
IC =10 Adc, IE=0 |
36 |
40 |
- |
V |
| NPN Emitter-Base Voltage |
BVEBO |
IE = 100 Adc, IC = 0 |
5 |
- |
- |
V |
| NPN Collector Current |
IC MAX |
|
10 |
20 |
|
mA |
| NPN Emitter Current |
IE MAX |
|
10 |
20 |
|
mA |
| PNP Collector-Emitter Voltage |
BVCEO |
IC = 1 mAdc, IB = 0 |
36 |
40 |
- |
V |
| PNP Collector-Base Voltage |
BVCBO |
IC = 10 Adc, IE = 0 |
36 |
40 |
- |
V |
| PNP Emitter-Base Voltage |
BVEBO |
IE = 100 Adc, IC = 0 |
5 |
- |
- |
V |
| PNP Collector Current |
IC MAX |
|
10 |
20 |
|
mA |
| PNP Emitter Current |
IE MAX |
|
10 |
20 |
|
mA |
| Collector-Collector Voltage |
BVCC |
|
±100 |
±200 |
- |
V |
| Emitter-Emitter Voltage |
BVEE |
|
±100 |
±200 |
- |
V |
| Operating Temperature Range |
TA |
|
0 |
|
70 |
°C |
| Maximum Junction Temperature |
TJMAX |
|
|
|
150 |
°C |
| Storage Temperature |
TSTORE |
|
-45 |
|
125 |
°C |
DescriptionThe THAT300 Series ICs are large-geometry monolithic NPN and/or PNP transistor arrays which combine low noise, high speed and excellent parametric matching between devices of the same gender.The large geometries typically result in 25 base spreading resistance for the PNP devices (30 for the NPNs), producing 0.75 nV/ Hz voltage noise (0.8 /nV Hz for the NPNs). This makes the 300 Series an ideal choice for low-noise amplifier input stages.
Fabricated on a Complementary Bipolar Dielectrically Isolated process, each transistor is electrically isolated from the others by a layer of insulating oxide. The resulting low collector-to-substrate capacitance produces a typical NPN fT of 350 MHz,325 MHz for the PNPs. This delivers ac performance similar to discrete 2N3904- and 2N3906-class devices.Dielectric isolation also minimizes crosstalk and provides complete DC isolation.
Substrate biasing is not required for normal operation,though the substrate should be grounded to optimize speed and minimize inter-device crosstalk.The monolithic construction assures excellent parameter matching and tracking over temperature.
THAT340P Data Sheet
