Features: • Low-saturation voltage.• Low voltag drive (2.5V).• Enhansment type.• Built-in Gate-to-Emitter protection diode.• Mounting Height 1.1mm, Mounting Area 19.2mm2.• dv / dt guarantee.*PinoutSpecifications Parameter Symbol Conditions Rating...
TIG032TS: Features: • Low-saturation voltage.• Low voltag drive (2.5V).• Enhansment type.• Built-in Gate-to-Emitter protection diode.• Mounting Height 1.1mm, Mounting Area 19.2mm...
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|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Collector-to-Emitter Voltage |
VCES |
400 |
V | |
| Gate-to-Emitter Voltage (DC) |
VGES |
±6 |
V | |
| Gate-to-Emitter Voltage (Pulse) |
VGES |
PW1ms |
±8 |
V |
| Collector Current (Pulse) |
ICP1 |
PW500s, duty cycle0.5%, CM=400F, VGE=2.5V |
150 |
A |
|
ICP2 |
PW500µs, duty cycle0.5%, CM=400µF, VGE=4V |
180 |
A | |
| Maximum Collector-to-Emitter dv / dt |
dVCE / dt |
VCE320V, starting Tch=25 |
400 |
V / s |
| Channel Temperature |
Tch |
150 |
||
| Storage Temperature |
Tstg |
-40 to +150 |
| Absolute maximum ratings | |
|---|---|
| VCES [V] | 400 |
| VGES(DC) [V] | ±6 |
| ICP [A] | 180 |
| Electrical characteristics | |
|---|---|
| VGE(off) min [V] | 0.4 |
| VGE(off) max [V] | 1 |
| VCE [V] | 10 |
| IC [mA] | 1 |
| VCE(sat) typ [V] | 3.4 |
| VCE(sat) max [V] | 4.8 |
| IC [A] | 150 |
| VGE [V] | 2.5 |
| Cies typ [pF] | 5100 |
| VCE [V] | 10 |
| f [MHz] | 1 |