Features: · LOWINTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level · HIGH POWER · HIGH GAIN G1dB=12.5dB at 3.4GHz to 3.8GHz· BROADBANDINTERNALLYMATCHEDFET· HERMETICALLY SEALED PACKAGESpecifications CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage ...
TIM3438-16SL: Features: · LOWINTERMODULATION DISTORTION IM3=-45 dBc at Pout= 31.5dBm Single Carrier Level · HIGH POWER · HIGH GAIN G1dB=12.5dB at 3.4GHz to 3.8GHz· BROADBANDINTERNALLYMATCHEDFET· HERMETICALLY SE...
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DescriptionThe TIM3536-60 is designed as one kind of microwave power GaAs FET device that has four...
Features: · HIGH POWER P1dB=41.5dBm at 3.7GHz to 4.2GHz· HIGH GAIN G1dB=11.5dB at 4.4GHz to 5.0G...
DescriptionThe TIM3742-16SL is designed as one kind of microwave power GaAs FET device that has fo...
CHARACTERISTICS | SYMBOL |
UNIT |
RATING |
Drain-Source Voltage |
VDS |
V |
15 |
Gate-Source Voltage |
VGS |
V |
-5 |
Drain Current |
IDS |
A |
13 |
Total Power Dissipation (Tc= 25 °C) |
PT |
W |
75 |
Channel Temperature |
Tch |
175 | |
Storage Temperature |
Tstg |
-65 to +175 |