DescriptionThe TIM3536-60 is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 48 dBm at 3.5 GHz to 3.6 GHz;(2)high gain: G1db = 9 dB at 3.5 GHz to 3.6 GHz;(3)internally matched type;(4)hermetically sealed package. The electrical charac...
TIM3536-60: DescriptionThe TIM3536-60 is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 48 dBm at 3.5 GHz to 3.6 GHz;(2)high gain: G1db = 9 dB at ...
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The TIM3536-60 is designed as one kind of microwave power GaAs FET device that has four points of features:(1)high power: P1db = 48 dBm at 3.5 GHz to 3.6 GHz;(2)high gain: G1db = 9 dB at 3.5 GHz to 3.6 GHz;(3)internally matched type;(4)hermetically sealed package.
The electrical characteristics of the TIM3536-60 can be summarized as:(1)transconductance: 20 s;(2)pinch-off voltage: -0.5 to -2.5 V;(3)saturated drain current: 38 to 46 A;(4)gate-source breakdown voltage: -5 V;(5)thermal resistance: 0.6 to 0.8 /W.
The RF performance speifications of the TIM3536-60 can be concluded into some points:(1)output power at 1 dB compression point: 47.0 to 480 dBm;(2)power gain at 1 dB compression point: 8.0 to 9.0 dB;(3)drain current: 12.0 to 15.0 A;(4)power added efficiency: 38 %;(5)channel temperature rise: 100 .
And the absolute maximum ratings of this device can be summarized as:(1)drain-source voltage: 15 V;(2)gate-source voltage: -5 V;(3)drain current: 46 A;(4)total power dissipation: 185 W;(5)channel temperature: 175 ;(6)storage temperature: -65 to +175 . If you want to know more information about the TIM3536-60, please download the datasheet in www.seekic.com or www.chinaicmart.com .