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TIP106

Transistors Darlington PNP Epitaxial Sil Darl

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SeekIC No. : 00217041 Detail

TIP106: Transistors Darlington PNP Epitaxial Sil Darl

TIP106 Data Sheet

floor Price/Ceiling Price

US $ .25~.38 / Piece | Get Latest Price
Part Number:
TIP106
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.38
  • $.34
  • $.29
  • $.25
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Quick Details

Configuration : Single Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 80 V Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 80 V Maximum DC Collector Current : 8 A
Maximum Collector Cut-off Current : 50 uA Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220
Packaging : Bulk    

Description

Power Dissipation :
Transistor Polarity : PNP
Collector- Emitter Voltage VCEO Max : 80 V
Collector- Base Voltage VCBO : 80 V
Mounting Style : Through Hole
Packaging : Bulk
Configuration : Single
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 150 C
Package / Case : TO-220
Maximum DC Collector Current : 8 A
Maximum Collector Cut-off Current : 50 uA


Application

PINCONFIGURATION
1.BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR






Specifications

Collector-base voltage (open emitter)
VCBO
max.
60
80
100
V
Collector-emitter voltage (open base)
VCEO
max.
60
80
100
V
Collector current
IC
max.
8.0
A
Total power dissipation up to TC = 25°C
Ptot
max.
80
W
Junction temperature
Tj
max.
150
°C
Collector-emitter saturation voltage
IC = 3 A; IB = 6 mA
VCEsat
max.
2.0
v
D.C. current gain
IC = 3 A; VCE = 4 V
hFE
min.
1.0
k
max.
20
k

Collector-base voltage (open emitter)
VCBO
max.
60
80
100
V
Collector-emitter voltage (open base)
VCEO
max.
60
80
100
V
Emitter-base voltage (open collector)
VEBO
max.
5.0
V
Collector current
IC
max.
8.0
A
Collector peak current
ICM
max.
15
A
Base current
IB
max.
1.0
A
Total power dissipation up to TC = 25°C
Ptot
max.
80
W
Derate above 25°C
max.
0.64
W/°C
Total power dissipation up to TA = 25°C
Ptot
max.
2.0
W
Derate above 25°C
max.
0.016
W/°C
Junction temperature
Tj
max.
150
°C
Storage temperature
Tstg
65 to +150
°C





Parameters:

Technical/Catalog InformationTIP106
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP - Darlington
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)8A
Power - Max80W
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A, 4V
Vce Saturation (Max) @ Ib, Ic2V @ 6mA, 3A
Frequency - Transition-
Current - Collector Cutoff (Max)50A
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names TIP106
TIP106
TIP106OS ND
TIP106OSND
TIP106OS



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