TK100E06N1,S1X, US $ 1.16-2.56, TK100E06N1,S1X DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003431231 Detail

TK100E06N1,S1X: MOSFET N CH 60V 100A TO-220

TK100E06N1,S1X Data Sheet

US $ 1.16~2.56 / Piece | Get Latest Price

Part Number:: TK100E06N1,S1X
Mfg:
Supply Ability:: 5000

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$2.56
$2.28
$2.05
$1.87
$1.69
$1.51
$1.28
$1.21
$1.16

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Upload time: 2024/5/15

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Recent History
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MOSFET N-CH 600V 10A TO220SIS

Product Details

Quick Details

Series:	-	Manufacturer:	Toshiba
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Current - Collector (Ic) (Max):	-	Output Power :	13.5 W
FET Feature:	Standard	Drain to Source Voltage (Vdss):	60V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	100A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	2.3 mOhm @ 50A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	4V @ 1mA	Gate Charge (Qg) @ Vgs:	140nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	10500pF @ 30V
Power - Max:	255W	Mounting Type:	*
Package / Case:	*	Supplier Device Package:	*

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25° C: 100A
Mounting Type: *
Gate Charge (Qg) @ Vgs: 140nC @ 10V
Supplier Device Package: *
Package / Case: *
Packaging: *
Vgs(th) (Max) @ Id: 4V @ 1mA
Manufacturer: Toshiba
Power - Max: 255W
Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds: 10500pF @ 30V

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TK100E06N1,S1X

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