TK100E10N1,S1X, US $ 1.53-3.36, TK100E10N1,S1X DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003431233 Detail

TK100E10N1,S1X: MOSFET N CH 100V 207A TO220

TK100E10N1,S1X Data Sheet

US $ 1.53~3.36 / Piece | Get Latest Price

Part Number:: TK100E10N1,S1X
Mfg:
Supply Ability:: 5000

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$3.36
$3
$2.7
$2.46
$2.22
$1.99
$1.68
$1.6
$1.53

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Recent History
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Product Details

Quick Details

Series:	-	Manufacturer:	Toshiba
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Gain :	19.5 dB	Current - Collector (Ic) (Max):	-
FET Feature:	Standard	Drain to Source Voltage (Vdss):	100V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	207A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	3.4 mOhm @ 50A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	4V @ 1mA, 10V	Gate Charge (Qg) @ Vgs:	140nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	8800pF @ 50V
Power - Max:	255W	Mounting Type:	Through Hole
Package / Case:	TO-220-3	Supplier Device Package:	TO-220-3

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Gate Charge (Qg) @ Vgs: 140nC @ 10V
Supplier Device Package: TO-220-3
Manufacturer: Toshiba
Power - Max: 255W
Vgs(th) (Max) @ Id: 4V @ 1mA, 10V
Current - Continuous Drain (Id) @ 25° C: 207A
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds: 8800pF @ 50V

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TK100E10N1,S1X

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