TLP251F

The TLP251F consist of a GaALAs light emitting diode and integrated photodetector.It suitable for gate driving circuit of IGBT or power MOS FET.It is capable of"direct" gate drive of lower power power IGBTs.

Features of the TLP251F are:(1)input threshold current:If=5mA(max.);(2)supply voltage:10V to 35V;(3)supply current:11mA(max.);(4)output peak current:±0.4A(max.);(5)switching time:tpHL,tpLH=1s(max.);(6)isolation voltage:2500Vrms(min.).

If you want to know more information such as the electrical characteristics about the TLP251F, please download the datasheet in www.seekic.com or www.chinaicmart.com .