TLP421F

Collector−emitter voltage: 80V (min)
Current transfer ratio: 50% (min) Rank GB: 100% (min)
Isolation voltage: 5000 Vrms (min)
UL recognized: UL1577
BSI approved: BS EN60065: 1994 Approved no. 8411 BS EN60950: 1992 Approved no. 8412
SEMKO approved: EN60065, EN60950, EN60335 Approved no. 9910249 / 01
 Option (D4) type
   TUV approved: DIN VDE0884
                           Approved no. R9950202
   Maximum operating insulation voltage: 1130VPK
   Maximum permissible over voltage: 8000VPK
   (Note): When a VDE0884 approved type is needed,please designate the " Option (D4) "
   Making VDE application: DIN VDE0884
Construction mehanical rating

The TOSHIBA TLP421F consists of a silicone photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage(AC: 5kVRMS (min)).

Maximum rating and electrical characteristics are the same as TLP421F technical datasheet.