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TMF8901B

Features: - Power gainGP = 12.4 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHzGP = 14.7 dB at VDS = 6.0 V, IDset = 200 mA, f = 470 MHz- Output powerPOUT = 32.4 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHzPOUT = 34.7 dBm at VDS = 6.0 V, IDset = 200 mA, f = 470 MHz- Drain efficiencyD = 60 % (typ....

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TMF8901B: Features: - Power gainGP = 12.4 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHzGP = 14.7 dB at VDS = 6.0 V, IDset = 200 mA, f = 470 MHz- Output powerPOUT = 32.4 dBm at VDS = 4.5 V, IDset = 200 mA, f ...

TMF8901B Data Sheet

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Part Number:
TMF8901B
Supply Ability:
5000

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Product Details

Description



Features:

- Power gain
GP = 12.4 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz
GP = 14.7 dB at VDS = 6.0 V, IDset = 200 mA, f = 470 MHz
- Output power
POUT = 32.4 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz
POUT = 34.7 dBm at VDS = 6.0 V, IDset = 200 mA, f = 470 MHz
- Drain efficiency
D = 60 % (typ.)




Application

- VHF and UHF wide band amplifier




Pinout

Connection Diagram






Specifications

Parameter Symbol Ratings Unit
Drain to Source Voltage VDS 13.0 V
Gate to Source Voltage VGS 4.0 V
Drain Current ID 1.2 A
Total Power Dissipation Ptot 5.0 W
Channel Temperature Tch 150
Storage Temperature Tstg -65 ~ 150





Description

LDMOS Power Transistor (3W)
TMF8901B is used as power amplifier for VHF and UHF band applications, especially FRS.





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