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TMF8901F

Features: - Power gain GP = 12.5 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz- Output power POUT = 32 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz- Drain efficiency D = 60 % (typ.)Application- VHF and UHF wide band amplifierPinoutSpecifications Parameter Symbol Ratings Unit ...

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SeekIC No. : 004523696 Detail

TMF8901F: Features: - Power gain GP = 12.5 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz- Output power POUT = 32 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz- Drain efficiency D = 60 % (typ.)Application- ...

TMF8901F Data Sheet

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Part Number:
TMF8901F
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

- Power gain GP = 12.5 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz
- Output power POUT = 32 dBm at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz
- Drain efficiency D = 60 % (typ.)




Application

- VHF and UHF wide band amplifier




Pinout






Specifications

Parameter
Symbol
Ratings
Unit
Drain to source voltage
VDS
13
V
Gate to source voltage
VGS
4
V
Drain Current
ID
1.2
A
Total Power Dissipation
PTOT
3
W
Channel Temperature
TCH
150
Storage Temperature
Tstg
-65 ~ 150





Description

LDMOS Power Transistor (1.5W)
TMF8901F is used as power amplifier for VHF and UHF band applications, especially FRS.





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