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TN0200T

MOSFET 20V 1.2A 0.35W

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SeekIC No. : 00166271 Detail

TN0200T: MOSFET 20V 1.2A 0.35W

TN0200T Data Sheet

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Part Number:
TN0200T
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 0.73 A
Resistance Drain-Source RDS (on) : 400 mOhms at 4.5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-236-3    

Description

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Package / Case : TO-236-3
Resistance Drain-Source RDS (on) : 400 mOhms at 4.5 V
Continuous Drain Current : 0.73 A


Features:

N-Channel MOSFET


Specifications

Parameter Symbol TN0200K TN0200T Unit
Drain-Source Voltage VDS 20 20 V
Gate-Source Voltage VGS ±8 ±8
Continuous Drain Current TA = 25 ID 0.73 0.73 A
See Note 0.58 0.58
Pulsed Drain Current IDM 4 4
Power Dissipation TA = 25 PD 0.35 0.35 W
TA = 70 0.22 0.22
Operating Junction and Storage Temperature Range Tj and Tstg -55to150 -55to150
Maximum Junction-to-Ambient RthJA 357 357 /W



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