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TN0201T

MOSFET 20V 0.39A

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SeekIC No. : 00164632 Detail

TN0201T: MOSFET 20V 0.39A

TN0201T Data Sheet

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Part Number:
TN0201T
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/12

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.39 A
Resistance Drain-Source RDS (on) : 1000 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-236-3    

Description

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Package / Case : TO-236-3
Resistance Drain-Source RDS (on) : 1000 mOhms
Continuous Drain Current : 0.39 A


Features:

` Low On-Resistance: 0.75  
` Low Threshold: <1.75 V
` Low Input Capacitance: 65 pF
` Fast Switching Speed: 15 ns
` Low Input and Output Leakage


Application

 · Direct Logic-Level Interface: TTL/CMOS
 · Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
 · Battery Operated Systems
 · Solid-State Relays


Specifications

Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±20
Continuous Drain Current (TJ = 150)
TA= 25
ID
0.39
A
TA= 70
0.25
Pulsed Drain Currenta
IDM
0.75
Power Dissipation
TA= 25
PD
0.35
W
TA= 70
0.22
Thermal Resistance, Junction-to-Ambient
RthJA
357
/W
Operating Junction and Storage Temperature Range
TJ, Tstg
55 to 150



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