TPC6002(TE85L,F)

MOSFET N-CH 30V 6A VS-6

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SeekIC No. : 003430600 Detail

TPC6002(TE85L,F): MOSFET N-CH 30V 6A VS-6

floor Price/Ceiling Price

Part Number:
TPC6002(TE85L,F)
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/3/8

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 11.5 dB at 500 MHz Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 6A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) @ Vgs: 13nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 610pF @ 10V
Power - Max: - Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: VS-6 (2.9x2.8)    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Current - Continuous Drain (Id) @ 25° C: 6A
Gate Charge (Qg) @ Vgs: 13nC @ 10V
Input Capacitance (Ciss) @ Vds: 610pF @ 10V
Power - Max: -
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: SOT-23-6 Thin, TSOT-23-6
Manufacturer: Toshiba
Supplier Device Package: VS-6 (2.9x2.8)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 3A, 10V


Parameters:

Technical/Catalog InformationTPC6002(TE85L,F)
VendorToshiba (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs30 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds 610pF @ 10V
Power - Max700mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs13nC @ 10V
Package / CaseVS-6 (SOT-23-6)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TPC6002 TE85L,F
TPC6002TE85L,F
TPC6002FCT ND
TPC6002FCTND
TPC6002FCT



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