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TPC6003(TE85L,F,M)

MOSFET MOSFET N-Ch 30V 6A Rdson=0.024Ohm

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SeekIC No. : 00151973 Detail

TPC6003(TE85L,F,M): MOSFET MOSFET N-Ch 30V 6A Rdson=0.024Ohm

TPC6003(TE85L,F,M) Data Sheet

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Part Number:
TPC6003(TE85L,F,M)
Mfg:
Toshiba
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.22
  • $.18
  • $.15
  • $.14
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 6 A
Resistance Drain-Source RDS (on) : 0.024 Ohms Configuration : Single Quad Drain
Mounting Style : SMD/SMT Package / Case : VS-6
Packaging : Reel    

Description

Maximum Operating Temperature :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Continuous Drain Current : 6 A
Configuration : Single Quad Drain
Resistance Drain-Source RDS (on) : 0.024 Ohms
Package / Case : VS-6


Parameters:

Technical/Catalog InformationTPC6003(TE85L,F,M)
VendorToshiba
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs24 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds 1250pF @ 10V
Power - Max700mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs25nC @ 10V
Package / Case2-3T1A
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names TPC6003 TE85L,F,M
TPC6003TE85L,F,M



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