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TPCA8009-H

Features: • Small footprint due to small and thin package• High speed switching• Small gate charge: Qg = 10nC (typ.)• Low drain-source ON resistance: RDS (ON) = 240m (typ.)• High forward transfer admittance: |Yfs| = S (typ.)• Low leakage current: IDSS = 100 A (m...

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TPCA8009-H: Features: • Small footprint due to small and thin package• High speed switching• Small gate charge: Qg = 10nC (typ.)• Low drain-source ON resistance: RDS (ON) = 240m (typ.)&#...

TPCA8009-H Data Sheet

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Part Number:
TPCA8009-H
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Small footprint due to small and thin package
• High speed switching
• Small gate charge: Qg = 10nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 240m (typ.)
• High forward transfer admittance: |Yfs| = S (typ.)
• Low leakage current: IDSS = 100 A (max) (VDS = 100 V)
• Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID = 1 mA)


Specifications

Characteristics Symbol Rating Unit
Drain-source voltage VDSS 150 V
Drain-gate voltage (RGS = 20 k) VDGR 150 V
Gate-source voltage VGSS ±20 V
Drain current DC (Note 1) ID 7 A
Pulsed (Note 1) IDP 14 A
Drain power dissipation (Tc=25) PD 45 W
Drain power dissipation (t = 10 s)
(Note 2a)		 PD 2.8 W
Drain power dissipation (t = 10 s)
(Note 2b)		 PD 1.6 W
Single pulse avalanche energy
(Note 3)		 EAS 34 mJ
Avalanche current IAR 7 A
Repetitive avalanche energy
(Tc=25) (Note 4)		 EAR 1.5 mJ
Channel temperature Tch 150
Storage temperature range Tstg −55~150
Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.


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