TPCF8104(TE85L)

MOSFET P-CH 30V 6A VS-8

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SeekIC No. : 003433762 Detail

TPCF8104(TE85L): MOSFET P-CH 30V 6A VS-8

floor Price/Ceiling Price

Part Number:
TPCF8104(TE85L)
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Quick Details

Series: - Manufacturer: Toshiba
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Gain : 11.5 dB at 500 MHz Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 6A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) @ Vgs: 34nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1760pF @ 10V
Power - Max: - Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead Supplier Device Package: VS-8 (2.9x1.9)    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Current - Continuous Drain (Id) @ 25° C: 6A
Package / Case: 8-SMD, Flat Lead
Gate Charge (Qg) @ Vgs: 34nC @ 10V
Power - Max: -
Packaging: Cut Tape (CT)
Vgs(th) (Max) @ Id: 2V @ 1mA
Manufacturer: Toshiba
Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds: 1760pF @ 10V
Supplier Device Package: VS-8 (2.9x1.9)


Parameters:

Technical/Catalog InformationTPCF8104(TE85L)
VendorToshiba (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs28 mOhm @ 3A, 10V
Input Capacitance (Ciss) @ Vds 1760pF @ 10V
Power - Max700mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs34nC @ 10V
Package / CaseVS-8 (2-3U1A)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names TPCF8104 TE85L
TPCF8104TE85L
TPCF8104CT ND
TPCF8104CTND
TPCF8104CT



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