Position: Home  > All Categories> Integrated Circuits (ICs) > TPCP8001-H

TPCP8001-H

Features: • Small footprint due to a small and thin package• High speed switching• Small gate charge: QSW = 3.6 nC (typ.)• Low drain-source ON-resistance: RDS (ON) = 13 m (typ.)• High forward transfer admittance: |Yfs| = 16 S (typ.)• Low leakage current: IDSS = ...

product image

TPCP8001-H Picture
See larger image
SeekIC No. : 004526212 Detail

TPCP8001-H: Features: • Small footprint due to a small and thin package• High speed switching• Small gate charge: QSW = 3.6 nC (typ.)• Low drain-source ON-resistance: RDS (ON) = 13 m (ty...

TPCP8001-H Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
TPCP8001-H
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/5

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Small footprint due to a small and thin package
• High speed switching
• Small gate charge: QSW = 3.6 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 13 m (typ.)
• High forward transfer admittance: |Yfs| = 16 S (typ.)
• Low leakage current: IDSS = 10 A (max) (VDS = 30V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)


Pinout

Connection Diagram


Specifications

Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Drain-gate voltage (RGS = 20 k)
VDGR
30
V
Gate-source voltage
VGSS
±20
V
Drain current DC (Note 1)
ID
7.2
A
Pulsed (Note 1)
IDP
28.8
A
Drain power dissipation (t = 5 s)
(Note 2a)
PD
1.68
W
Drain power dissipation (t = 5 s)
(Note 2b)
PD
0.84
W
Single-pulse avalanche energy (Note 3)
EAS
3.93
mJ
Avalanche current
IAR
2.2
A
Repetitive avalanche energy (Tc=25) (Note 4)
EAR
0.016
mJ
Channel temperature
Tch
150
Storage temperature range
Tstg
−55 to 150
Note: For Notes 1 to 5, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Crystals and Oscillators
WT325BI0030.000000
2SB49
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Prototyping Products
AVT4168
DE1
Switches
US32DMRJ
HBGQ22P-11ET
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Line Protection, Backups
BX0023
A20B-1008-0550
View more