MOSFET P-CH SGL -20V -6A TSSOP-8
TPCS8102(TE12L,Q): MOSFET P-CH SGL -20V -6A TSSOP-8
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| Series: | - | Manufacturer: | Toshiba | ||
| FET Type: | MOSFET P-Channel, Metal Oxide | Gain : | 11.5 dB at 500 MHz | ||
| Transistor Type: | - | Current - Collector (Ic) (Max): | - | ||
| FET Feature: | Logic Level Gate | Drain to Source Voltage (Vdss): | 20V | ||
| Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 6A | ||
| Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
| Rds On (Max) @ Id, Vgs: | 20 mOhm @ 3A, 4V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
| Vgs(th) (Max) @ Id: | 1.2V @ 200µA | Gate Charge (Qg) @ Vgs: | 37nC @ 5V | ||
| Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 2740pF @ 10V | ||
| Power - Max: | - | Mounting Type: | Surface Mount | ||
| Package / Case: | 8-TSSOP (0.173", 4.40mm Width) | Supplier Device Package: | 8-TSSOP |
| Technical/Catalog Information | TPCS8102(TE12L,Q) |
| Vendor | Toshiba |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 6A |
| Rds On (Max) @ Id, Vgs | 20 mOhm @ 3A, 4V |
| Input Capacitance (Ciss) @ Vds | 2740pF @ 10V |
| Power - Max | 600mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 37nC @ 5V |
| Package / Case | 8-TSSOP |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | TPCS8102 TE12L,Q TPCS8102TE12L,Q TPCS8102QTR ND TPCS8102QTRND TPCS8102QTR |