MOSFET Single P-Ch Enh-Mode MOSFET
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 15 V | ||
| Gate-Source Breakdown Voltage : | - 15 V, 2 V | Continuous Drain Current : | 1.6 A | ||
| Resistance Drain-Source RDS (on) : | 180 mOhms (Typ) | Configuration : | Single Quad Drain Triple Source | ||
| Maximum Operating Temperature : | + 125 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOIC-8 | Packaging : | Tube |
| Technical/Catalog Information | TPS1100DG4 |
| Vendor | Texas Instruments |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 15V |
| Current - Continuous Drain (Id) @ 25° C | 1.6A |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 1.5A, 10V |
| Input Capacitance (Ciss) @ Vds | - |
| Power - Max | 791mW |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 5.45nC @ 10V |
| Package / Case | 8-SOIC (3.9mm Width) |
| FET Feature | Logic Level Gate |
| Drawing Number | 296; 4040047-2; D; 8 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | TPS1100DG4 TPS1100DG4 |