MFG:. Package Cooled:. D/C:07+
MFG: .
Package Cooled: .
D/C: 07+
Description: TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear pl...
TSAL7600 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear plastic packages.
In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters.
| Parameter | Test Conditions | Symbol | Value | Unit |
| Reverse Voltage | VS | 5 | V | |
| Forward Current | IF | 100 | mA | |
| Peak Forward Current | tp/T = 0.5, tp = 100 s | IFM | 200 | mA |
| Surge Forward Current | tp = 100 s | IFSM | 1.5 | A |
| Power Dissipation | PV | 210 | mW | |
| Junction Temperature | Tj | 100 | ||
| Operating Temperature Range | Tamb | 55...100 | ||
| Storage Temperature Range | Tstg | 55...100 | ||
| Soldering Temperature | Tsd | 260 | ||
| Thermal Resistance Junction/Ambient | t 5sec, 2 mm from case | RthJA | 350 | K/W |
TSAL7600
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