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TSFF5200

Infrared Emitters 160mW/sr 870nM 100mA

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SeekIC No. : 0019447 Detail

TSFF5200: Infrared Emitters 160mW/sr 870nM 100mA

TSFF5200 Data Sheet

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Part Number:
TSFF5200
Mfg:
Vishay Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Wavelength : 870 nm Beam Angle : 10 deg
Radiant Intensity : 1600 mW/sr Maximum Operating Temperature : + 85 C
Minimum Operating Temperature : - 25 C Package / Case : T-1 3/4
Packaging : Bulk    

Description

Maximum Operating Temperature : + 85 C
Packaging : Bulk
Package / Case : T-1 3/4
Minimum Operating Temperature : - 25 C
Wavelength : 870 nm
Radiant Intensity : 1600 mW/sr
Beam Angle : 10 deg


Features:

` High modulation bandwidth (35 MHz)
` Extra high radiant power and radiant intensity
` Low forward voltage
` Suitable for high pulse current operation
` Standard T13/4 (ø 5 mm) package
` Angle of half intensity = ± 10°
` Peak wavelength  p = 870 nm
` High reliability
` Good spectral matching to Si photodetectors


Application

IInfrared video data transmission between Camcorder and TV set. Free air data transmission systems with high modulation frequencies or high data transmission rate requirements.

 




Specifications

Parameter Test Conditions Symbol Value Unit
Reverse Voltage   VR 5 V
Forward Current   IF 100 mA
Peak Forward Current tp/T = 0.5, tp = 100s IFM 300 mA
Surge Forward Current tp100s IFSM 1 A
Power Dissipation   PV 250 mW
Junction Temperature   Tj 100
Operating Temperature Range   Tamb 25...+85
Storage Temperature Range   Tstg 25...+85
Soldering Temperature t 5sec, 2 mm from case Tsd 260
Thermal Resistance Junction/Ambient   RthJA 300 K/W



Description

TSFF5200 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. The new technology combines the high speed of DH GaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology.




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