TSFF5410

Beam Angle :
Maximum Operating Temperature : + 85 C
Minimum Operating Temperature : - 40 C
Packaging : Bulk
Package / Case : T-1 3/4
Wavelength : 870 nm
Radiant Intensity : 700 mW/sr


Features:

• High modulation bandwidth (23 MHz)
• Extra high radiant power and radiant intensity
• Low forward voltage
• Suitable for high pulse current operation
• Standard T-1¾ ( 5 mm) package
• Angle of half intensity = ± 22°
• Peak wavelength p = 870 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead-free device




Application

Infrared video data transmission between Camcorder and TV set.
Free air data transmission systems with high modulation frequencies or high data transmission rate requirements.




Specifications

Tamb = 25 °C, unless otherwise specified

Parameter	Test condition	Symbol	Value	Unit
Reverse Voltage		VR	5	V
Forward current		IF	10	mA
Peak Forward Current	tp/T = 0.5, tp = 100 µs	IFM	100	mA
Surge Forward Current	tp = 100 µs	IFSM	1	A
Power Dissipation		PV	250	mW
Junction Temperature		Tj	100	°C
Operating Temperature Range		Tamb	- 25 to + 85	°C
Storage Temperature Range		Tstg	- 25 to + 85	°C
Soldering Temperature	t 5 sec, 2 mm from case	Tsd	260	°C
Thermal Resistance Junction/ Ambient		RthJA	300	K/W

Description

TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package.

DH technology combines high speed with high radiant power at wavelength of 870 nm.