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TSHG5410

Infrared Emitters High Speed Emitter 5V 55mW 850nm 18 Deg

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SeekIC No. : 0018737 Detail

TSHG5410: Infrared Emitters High Speed Emitter 5V 55mW 850nm 18 Deg

TSHG5410 Data Sheet

floor Price/Ceiling Price

US $ .35~.43 / Piece | Get Latest Price
Part Number:
TSHG5410
Mfg:
Vishay
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~50
  • 50~100
  • Unit Price
  • $.43
  • $.4
  • $.38
  • $.35
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/15

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Product Details

Quick Details

Wavelength : 850 nm Radiant Intensity : 90 mW/sr
Maximum Operating Temperature : + 85 C Minimum Operating Temperature : - 40 C
Package / Case : T-1 3/4 Packaging : Bulk    

Description

Beam Angle :
Wavelength : 850 nm
Maximum Operating Temperature : + 85 C
Minimum Operating Temperature : - 40 C
Packaging : Bulk
Package / Case : T-1 3/4
Radiant Intensity : 90 mW/sr


Features:

• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): 5
• Leads with stand-off
• Peak wavelength: p = 850 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: = ± 18°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 18 MHz
• Good spectral matching with CMOS cameras
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC




Application

• Infrared radiation source for operation with CMOS cameras
• High speed IR data transmission




Specifications

PARAMETER TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
5
V
Forward current
IF
100
mA
Peak forward current tp/T = 0.5, tp = 100 s
IFM
200
mA
Surge forward current tp = 100 s
IFSM
1
A
Power dissipation
PV
180
mW
Junction temperature
Tj
100
Operating temperature range
Tamb
- 40 to + 85
Storage temperature range
Tstg
- 40 to + 100
Soldering temperature t 5 s, 2 mm from case
Tsd
260
Thermal resistance junction/ambient J-STD-051, leads 7 mm,
soldered on PCB
RthJA
230
K/W





Description

TSHG5410 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.






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