Infrared Emitters High Speed Emitter 5V 50mW 850nm 10 Deg
TSHG6200: Infrared Emitters High Speed Emitter 5V 50mW 850nm 10 Deg
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| Wavelength : | 850 nm | Radiant Intensity : | 1600 mW/sr | ||
| Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C | ||
| Package / Case : | T-1 3/4 | Packaging : | Bulk |
| Parameter | Test condition | Symbol | Value | Unit |
| Reverse Voltage | VR | 5 | V | |
| Forward current | IF | 100 | mA | |
| Peak Forward Current | tp/T = 0.5, tp = 100 µs | IFM | 200 | mA |
| Surge Forward Current | tp = 100 µs | IFSM | 1 | A |
| Power Dissipation | PV | 250 | mW | |
| Junction Temperature | Tj | 100 | ||
| Operating Temperature Range | Tamb | - 40 to + 85 | ||
| Storage Temperature Range | Tstg | - 40 to + 100 | ||
| Soldering Temperature | t 5 sec, 2 mm from case | Tsd | 260 | |
| Thermal Resistance Junction/Ambient | RthJA | 300 | K/W |
TSHG6200 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package.
The new technology combines high speed with high radiant power at wavelength of 850 nm.