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TSM3462

Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switch PA SwitchSpecifications Symbol Parameter Limit Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±8 V ID Pulsed Drain Current, VGS @4.5V 5 A...

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SeekIC No. : 004529664 Detail

TSM3462: Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switch PA SwitchSpecifications Symbol Parameter Limit Units VDS Drain-So...

TSM3462 Data Sheet

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Part Number:
TSM3462
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/17

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Product Details

Description



Features:

Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance


Application

Load Switch
PA Switch


Specifications

Symbol Parameter Limit Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage ±8 V
ID Pulsed Drain Current, VGS @4.5V 5 A
IDM Pulsed Drain Current, VGS @4.5V 20 A
IS Continuous Source Current (Diode Conduction)a,b 0.72 A
PD Maximum Power Dissipation Ta = 25 1.25
 W
Ta = 75 0.8
TJ Operating Junction Temperature +150
TJ, TSTG Operating Junction and Storage
Temperature Range		 -55 to +150
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t 5 sec.


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