Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switch PWM ApplicationSpecifications Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V Continuous Drain Current ID 8.5 A ...
TSM4416D: Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switch PWM ApplicationSpecifications Parameter Symbol Limit Unit Drain-So...
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| Parameter | Symbol | Limit | Unit | |
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current | ID | 8.5 | A | |
| Pulsed Drain Current | IDM | 40 | A | |
| Continuous Source Current (Diode Conduction)a,b | IS | 2.6 | A | |
| Maximum Power Dissipation | Ta = 25 | PD | 2.5 | W |
| Ta = 70 | 1.6 | |||
| Operating Junction Temperature | TJ | +150 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | - 55 to +150 | ||