Features: · Advance Trench Process Technology· High Density Cell Design for Ultra Low On-resistanceApplication· DC-DC Conversion· Battery SwitchPinoutSpecifications Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V ...
TSM4435: Features: · Advance Trench Process Technology· High Density Cell Design for Ultra Low On-resistanceApplication· DC-DC Conversion· Battery SwitchPinoutSpecifications Parameter Symbol Rat...
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|
Parameter |
Symbol |
Ratings |
Unit | |
| Drain-Source Voltage |
VDS |
-30 |
V | |
| Gate-Source Voltage |
VGS |
±20 |
V | |
| Continuous Drain Current |
ID |
-9.1 |
A | |
| Pulsed Drain Current |
IDM |
-50 |
A | |
| Continuous Source Current (Diode Conduction)a,b |
IS |
-2.1 |
A | |
| Maximum Power Dissipation | Ta = 25 |
PD |
2.5 |
W |
| Ta = 70 |
1.6 | |||
| Operating Junction Temperature |
TJ |
+150 |
||
| Operating Junction and Storage Temperature Range |
TJ, TSTG |
- 55 to +150 |
||