Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switch Dc-DC ConversionSpecifications Parameter Symbol Rating Unit Drain-Source Voltage VDG 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 12.2...
TSM4944D: Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Load Switch Dc-DC ConversionSpecifications Parameter Symbol Rating Unit Drain-...
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| Parameter | Symbol | Rating | Unit | |
| Drain-Source Voltage | VDG | 30 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 12.2 | A | |
| Pulsed Drain Current | IDM | 30 | ||
| Continuous Source Current (Diode Conduction)a,b | IS | 1.9 | A | |
| Maximum Power Dissipation | Ta = 25 | PD | 2.3 | W |
| Ta = 75 | 1.2 | |||
| Operating Junction Temperature | TJ | +150 | ||
| Operating and Storage Temperature Range | TJ, Tstg | -55 to +150 | ||