Features: ·Advanced trench process technology ·High Density Cell Design for Ultra Low On-Resistance·Improved Shoot-Through FOM ·Fully Characterized Avalanche Voltage and Current ·Specially Designed for DC/DC Converters and Motor DriversSpecifications Parameter Symbol Limit Unit Drain...
TSM55N03: Features: ·Advanced trench process technology ·High Density Cell Design for Ultra Low On-Resistance·Improved Shoot-Through FOM ·Fully Characterized Avalanche Voltage and Current ·Specially Designed ...
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| Parameter | Symbol | Limit | Unit | |
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 55 | A | |
| Pulsed Drain Current | ID | 350 | ||
| Maximum Power Dissipation | TA = 25 | PD | 70 | W |
| TA = 75 | 42 | W/ | ||
| Operating Junction Temperature | TJ | +150 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 to +150 | ||
| Single Pulse Drain to Source Avalanche Energy (VDD= 100V, VGS =10V, IAS =2A, L=10mH, RG =25) |
EAS | 300 | mJ | |