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TSM6866SD

Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Specially Designed for Li-on Battery Packs Battery Switch ApplicationSpecifications Symbol Parameter Limit Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±12...

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TSM6866SD: Features: Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistanceApplication Specially Designed for Li-on Battery Packs Battery Switch ApplicationSpecifications ...

TSM6866SD Data Sheet

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Part Number:
TSM6866SD
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/15

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Product Details

Description



Features:

Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance


Application

Specially Designed for Li-on Battery Packs
Battery Switch Application


Specifications

Symbol Parameter Limit Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage ±12 V
ID Continuous Drain Current 6 A
IDM Pulsed Drain Current 30 A
IS Continuous Source Current (Diode Conduction)a,b 1.7 A
PD Maximum Power Dissipation Ta = 25 1.6
 W
Ta = 75 1.1
TJ Operating Junction Temperature +150
TJ, TSTG Operating Junction and Storage
Temperature Range		 -55 to +150
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t 5 sec.


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