TSML1000

Beam Angle :
Maximum Operating Temperature : + 85 C
Minimum Operating Temperature : - 40 C
Packaging : Reel
Wavelength : 950 nm
Radiant Intensity : 7 mW/sr
Package / Case : SMD


Features:

• Extra high radiant power
• Low forward voltage
• Suitable for high pulse current operation
• Angle of half intensity = ± 12^•
• Peak wavelength p = 940 nm
• High reliability
• Good spectral matching to Si photodetectors




Application

Free air transmission systems For control and drive circuits Photointerrupters Punched tape readers

Specifications

Parameter	Test Conditions	Symbol	Value	Unit
Reverse Voltage		VR	5	V
Forward Current		IF	100	mA
Peak Forward Current	tp/T = 0.5, tp = 100s	IFM	200	mA
Surge Forward Current	tp = 100 s	IFSM	1.5	A
Power Dissipation		PV		mW
Junction Temperature		Tj	100
Operating Temperature Range		Tamb	40...+85
Storage Temperature Range		Tstg	40...+85
Soldering Temperature	t5sec, 2 mm from case	Tsd	260

Description

High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs. TSML1000 is a high efficiency infrared emitting diodein GaAlAs on GaAs technology molded in clear SMD package

In comparison with the standard GaAs on GaAs technology these TSML1000 emitters achieve about 100 radiant power improvement at a similar wavelength.The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters.