U1001-BD

Features: ·Sub-Harmonic Transmitter·Low DC Power Consumption·Optional Power Bias·8.0 dB Conversion Gain·30 dB LO/RF Isolation·100% On-Wafer RF and DC Testing·100% Visual Inspection to MIL-STD-883 Method 2010Specifications Supply Voltage (Vd) +6.0 VDC Supply Current (Id) 70 mA Gate Bia...

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SeekIC No. : 004534525 Detail

U1001-BD: Features: ·Sub-Harmonic Transmitter·Low DC Power Consumption·Optional Power Bias·8.0 dB Conversion Gain·30 dB LO/RF Isolation·100% On-Wafer RF and DC Testing·100% Visual Inspection to MIL-STD-883 Me...

floor Price/Ceiling Price

Part Number:
U1001-BD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

·Sub-Harmonic Transmitter
·Low DC Power Consumption
·Optional Power Bias
·8.0 dB Conversion Gain
·30 dB LO/RF Isolation
·100% On-Wafer RF and DC Testing
·100% Visual Inspection to MIL-STD-883 Method 2010



Specifications

Supply Voltage (Vd) +6.0 VDC
Supply Current (Id) 70 mA
Gate Bias Voltage (Vg) +0.3 VDC
Input Power (IF Pin) +0.3 VDC
Storage Temperature (Tstg) -65 to +165
Operating Temperature (Ta) -55 to MTTF Table4
Channel Temperature (Tch) MTTF Table4
(4) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.



Description

Mimix Broadband's 33.0-40.0 GHz GaAs MMIC transmitter has a small signal conversion gain of 8.0 dB with a 30.0 dB LO/RF isolation. The U1001-BD device has a pair of sub-harmonic mixers configured to form an image reject mixer which requires an LO at 15.5-21.5 GHz. This is followed by a two stage LNA. The image reject mixer reduces the need for unwanted sideband filtering before the power amplifier. The use of the sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The U1001-BD chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This U1001-BD device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.




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