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U7006B

Features: Single 3-V supply voltage High-power-added efficient power amplifier (Pout typ. 26.5 dBm) Ramp-controlled output power Low-noise preamplifier (NF typ. 1.8 dB) Biasing for external PIN diode T/R switchCurrent-saving standby mode Few external componentsPinoutSpecifications Paramete...

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U7006B: Features: Single 3-V supply voltage High-power-added efficient power amplifier (Pout typ. 26.5 dBm) Ramp-controlled output power Low-noise preamplifier (NF typ. 1.8 dB) Biasing for external PIN dio...

U7006B Data Sheet

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Part Number:
U7006B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Single 3-V supply voltage
High-power-added efficient power amplifier (Pout typ. 26.5 dBm)
Ramp-controlled output power
Low-noise preamplifier (NF typ. 1.8 dB)
Biasing for external PIN diode T/R switch
Current-saving standby mode
Few external components


Pinout

Connection Diagram


Specifications

Parameters

Symbol

Value

Unit

Supply voltage

VS

5.0

V

Junction temperature

TJ

125

°C

Storage temperature

Tstg

-55 to +150

°C

Ambient temperature range

PinPA

+10

dBm

Input power LNA Pin 4

PinLNA

-5

dBm

ESD protection according to ESD-S5.2-1994

 

Class M1

 




Description

The U7006B is a monolithic SiGe transmit/receive frontend IC with power amplifier, internally 50-Ω matched,low-noise amplifier and T/R switch driver. U7006B is especiallydesigned for operation in TDMA systems like DECT. Dueto the ramp-control feature and a very low quiescent cur-rent an external switch transistor for VS is not required.

Electrostatic sensitive U7006B.

Observe precautions for handling.




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