Features: · N-Channel Enhancement Mode Device· DMOS Structure· Lower Capacitances for Broadband Operation· Common Source Configuration· Lower Noise Floor· 100 MHz to 500 MHz OperationSpecifications Parameter Symbol Rating Units Drain-Source Voltage VDS 65 V Gate-Sourc...
UF281OP: Features: · N-Channel Enhancement Mode Device· DMOS Structure· Lower Capacitances for Broadband Operation· Common Source Configuration· Lower Noise Floor· 100 MHz to 500 MHz OperationSpecifications ...
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| Parameter |
Symbol |
Rating |
Units |
| Drain-Source Voltage |
VDS |
65 |
V |
| Gate-Source Voltage |
VGS |
20 |
V |
| Drain-Source Current |
LDS |
1.4 |
A |
| Power Dissipation |
PD |
26.9 |
W |
| Junction Temperature |
TJ |
200 |
|
| Storage Temperature |
TSTO |
-55 to +150 |
|
| Thermal Resistance |
X |
6.5 |
/W |