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UN222

Features: • Small and lightweight• Low power consumption (low VCE(sat) transistor used)• Low voltage drive• Transistors with built-in resistor with 6 elements incorporatedSpecifications Parameter Symbol Rating Unit PNP Collector-base voltage(Emitter open) ...

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UN222: Features: • Small and lightweight• Low power consumption (low VCE(sat) transistor used)• Low voltage drive• Transistors with built-in resistor with 6 elements incorporatedSpe...

UN222 Data Sheet

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Part Number:
UN222
Supply Ability:
5000

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  • 1~5000
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

• Small and lightweight
• Low power consumption (low VCE(sat) transistor used)
• Low voltage drive
• Transistors with built-in resistor with 6 elements incorporated


Specifications

Parameter
Symbol
Rating
Unit
PNP Collector-base voltage
(Emitter open)
VCBO
−10
V
Collector-emitter voltage
(Base open)
VCEO
−10
V
Collector current
IC
-3
A
Peak collector current
ICP
-4
A
NPN Collector-base voltage
(Emitter open)
VCBO
10
V
Collector-emitter voltage
(Base open)
VCEO
10
V
Collector current
IC
3
A
Peak collector current
ICP
4
A
Overall Total power dissipation *
PT
0.5
W
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to +150

Note) *: When the dissipation on one device is TC=25


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