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UNR222200L

TRANS NPN W/RES 50 HFE MINI-3

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SeekIC No. : 003437403 Detail

UNR222200L: TRANS NPN W/RES 50 HFE MINI-3

UNR222200L Data Sheet

floor Price/Ceiling Price

US $ .1~.29 / Piece | Get Latest Price
Part Number:
UNR222200L
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • Unit Price
  • $.29
  • $.2
  • $.17
  • $.15
  • $.13
  • $.1
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Panasonic Electronic Components - Semiconductor Products
Transistor Type: NPN - Pre-Biased Clamping Voltage : 13.5 V
Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 1µA Frequency - Transition: 200MHz
Power - Max: 200mW Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: Mini3-G1    

Description

Series: -
Transistor Type: NPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector Cutoff (Max): 1µA
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)Alternate Packaging
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
Frequency - Transition: 200MHz
Current - Collector (Ic) (Max): 500mA
Manufacturer: Panasonic Electronic Components - Semiconductor Products
Supplier Device Package: Mini3-G1
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 10V


Parameters:

Technical/Catalog InformationUNR222200L
VendorPanasonic - SSG (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)500mA
Power - Max200mW
Resistor - Base (R1) (Ohms)4.7K
Resistor - Emitter Base (R2) (Ohms)4.7K
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 10mA
Current - Collector Cutoff (Max)1A
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 100mA, 10V
Frequency - Transistion200MHz
Mounting TypeSurface Mount
Package / CaseMini 3P
PackagingCut Tape (CT)
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names UNR222200L
UNR222200L
UNR222200LCT ND
UNR222200LCTND
UNR222200LCT



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