UPA2200T1M-T1-AT

MOSFET N-CH 30V VSOF-SLIM

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SeekIC No. : 003433887 Detail

UPA2200T1M-T1-AT: MOSFET N-CH 30V VSOF-SLIM

floor Price/Ceiling Price

US $ .18~.18 / Piece | Get Latest Price
Part Number:
UPA2200T1M-T1-AT
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~3000
  • Unit Price
  • $.18
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Series: - Manufacturer: Renesas Electronics America
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 8A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 23 mOhm @ 8A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) @ Vgs: 8.7nC @ 5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 870pF @ 10V
Power - Max: 1.1W Mounting Type: Surface Mount
Package / Case: 8-WSOF Supplier Device Package: 8-VSOF    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Power - Max: 1.1W
Gate Charge (Qg) @ Vgs: 8.7nC @ 5V
Current - Continuous Drain (Id) @ 25° C: 8A
Rds On (Max) @ Id, Vgs: 23 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Manufacturer: Renesas Electronics America
Input Capacitance (Ciss) @ Vds: 870pF @ 10V
Package / Case: 8-WSOF
Supplier Device Package: 8-VSOF


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