UPA2810T1L-E2-AY, US $ .3-.3, UPA2810T1L-E2-AY DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003432097 Detail

UPA2810T1L-E2-AY: MOSFET P-CH 30V MINI 8-HVSON

UPA2810T1L-E2-AY Data Sheet

US $ .3~.3 / Piece | Get Latest Price

Part Number:: UPA2810T1L-E2-AY
Mfg:
Supply Ability:: 5000

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0~3000

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$.3

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15 Days

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Upload time: 2025/12/28

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Recent History
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Product Details

Quick Details

Series:	-	Manufacturer:	Renesas Electronics America
FET Type:	MOSFET P-Channel, Metal Oxide	Transistor Type:	-
Current - Collector (Ic) (Max):	-	FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V	Continuous Drain Current :	15 A
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	13A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	12 mOhm @ 13A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	2.5V @ 1mA	Gate Charge (Qg) @ Vgs:	40nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	1860pF @ 10V
Power - Max:	1.5W	Mounting Type:	Surface Mount
Package / Case:	8-HVSON	Supplier Device Package:	8-HVSON

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Packaging: Tape & Reel (TR)
Power - Max: 1.5W
Current - Continuous Drain (Id) @ 25° C: 13A
Gate Charge (Qg) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Manufacturer: Renesas Electronics America
Supplier Device Package: 8-HVSON
Rds On (Max) @ Id, Vgs: 12 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds: 1860pF @ 10V
Package / Case: 8-HVSON

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UPA2810T1L-E2-AY

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